Refereed Journal Publications

Total Citations: 1300+ h-Index: 11

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Jon has published in Applied Physics Letters, Physical Review journals, and IEEE Electron Devices Letters. 

He serves as a reviewer for Applied Physics Letters and Journal of Applied Physics.

Papers

J13. Growth of α-Ga2O3 on α-Al2O3 by conventional molecular-beam epitaxy and metal-oxide-catalyzed epitaxy

J13. Controlled Si doping of β-Ga2O3 by molecular beam epitaxy  

J12. Extending the kinetic and thermodynamic limits of molecular-beam epitaxy utilizing suboxide sources or metal-oxide catalyzed epitaxy 

J11. (editors' pick) Thermal stability of epitaxial α−Ga2O3 and (Al,Ga)2O3 layers on m-plane sapphire 

J10. Ultrafast dynamics of Gallium vacancy charge states in  β-Ga2O3 

J9. Adsorption-Controlled Growth of Ga2O3  by Suboxide Molecular-Beam Epitaxy

J8. (editors' pick) Intra- and Inter-Conduction Band Optical Absorption Processes in Ga2O3 

J7. Significantly reduced thermal conductivity in β-(Al0.1Ga0.9)2O3/ Ga2O3 superlattices 

J6. Recessed-gate enhancement-mode β-Ga2O3 MOSFETs 

J5. Ge-Doped β-Ga2O3 MOSFETs 

N. A. Moser, et al., Applied Physics Letters (2017)

A demonstration of the first Ge doped, β-Ga2Otransistor.

J4. Highly conductive Homoepitaxial Si-doped Ga2O3 films on (010) β-Ga2O3 by Pulsed Laser Deposition

K. D.  Leedy, et al., Applied Physics Letters (2017)

A first demonstration of Si doping in PLD grown Ga2O3. A mobility of 26.5cm2/Vs @ 1.74⨉1020/cm3 was achieved. 

J3. High pulsed current density β-Ga2O3 MOSFETs verified by an analytical model corrected for interface charge

J2. β-Ga2O3 MOSFETs for Radio Frequency Operation

A. J. Green, et al., IEEE Electron Device Letters (2017)

This was the first demonstration of RF performance in Ga2O3. Performance up to 12.9 GHz was demonstrated. 

J1. Enhancement-mode Ga2O3 wrap-gate fin field-effect transistors on native (100) β-Ga2O3  substrate with high breakdown voltage

K. D. Chabak, et al. , Applied Physics Letters (2016)

In this paper, we demonstrated the first enhancement mode Ga2O3 transistor. This transistor employed a Fin-FET design and achieved on/off ratios of more than 5-orders. This work was featured on the cover of APL.