Conference Talks
Overview
Jon has spoken around the work at various conferences and workshops including, Electronic Materials Conference (EMC), Compound Semiconductor Week (CSW), International Workshop on Gallium Oxide (IWGO), GOX, SPIE Opto, and The Hilton Head Workshop on MEMS.
Conference Talks
C. A. Watkins, et al., “Very High Frequency Stability of Single-crystal Silicon Thermal-piezoresistive Resonators with Phase-locked Loop”, Transducers 2023, Kyoto, Japan (June 2023)
M. Alonso-Orts, et al., “Phase formation, catalysis, In incorporation, and faceting of α-Ga2O3 and α-(In,Ga)2O3 grown on α-Al2O3 by molecular-beam epitaxy”, 21st Euro MBE Workshop, Madrid, Spain (2023)
(Invited) D. Jena, et al., “MBE Growth and Properties of Ultrawide Bandgap Oxide Layers Spanning 5.0 - 9.0 eV Energy Gaps”, International Workshop on Gallium Oxide (IWGO 2022), Nagano, Japan (October 2022)
J. P. McCandless, et al., “Impurity Scattering and Doping Control in MBE grown Ga2O3”, International Workshop on Gallium Oxide (IWGO 2022), Nagano, Japan (October 2022)
(Invited) D. Jena, et al., “MBE Growth and Properties of Ultrawide Bandgap Oxide Layers Spanning 5.0 - 9.0 eV Energy Gaps”, 36th North American Conference on Molecular Beam Epitaxy (NAMBE 2022), Rehoboth Beach, Delaware, USA (September 2022)
J. P. McCandless et al., “Transport in Si-Ga2O3”, Materials Science and Engineering 7th Annual Graduate Research Symposium, Cornell University, USA (August 2022)
K. Azizie, et al., “Si-doped β-Ga2O3 Films Grown at 1μm/hr by Suboxide MBE”, GOX, Washington D.C. (August 2022)
J. P. McCandless et al., "Si-Doping in MBE-Grown b-Ga2O3 with Room Temperature Mobility > 125 cm2/Vs”, 64th Electronic Materials Conference, Columbus, Ohio (June 2022)
K. Gann, et al., "Optimized Annealing for Activation of Implanted Si in β-Ga2O3”, MRS Spring Meeting, Honolulu, USA (May 2022)
H. Peelaers, et al., “Free-carrier and defect absorption in gallium oxide”, APS March Meeting, Chicago, USA (March 2022)
J. P. McCandless, P. Vogt, “Polarization Discontinuities in AlN/Ga2O3 Heterostructures”, IFP Workshop, Lower Saxony, Germany (October 2021)
J. P. McCandless, et al., “A Modified Silicon Effusion Cell for Controlled Silicon Donor Doping in beta-Ga2O3 in Plasma-assisted MBE”, 21st International Conference on Molecular Beam Epitaxy (ICMBE), Puerto Vallarta, Mexico (September 2021)
J.P. McCandless, et al., Materials Science and Engineering 6th Annual Graduate Research Symposium, Cornell University, USA (August 2021)
J. P. McCandless, et al., “Stabilizing α-Ga2O3 and α-(Al,Ga)2O3 up to 900°C”, Electron Materials Conference (EMC) 63rd, (Virtual), (June 2021)
A. Singh, et al., “Measurement of Ultrafast Dynamics of Gallium Vacancy Charge States in β-Ga2O3”, APS March Meeting, (Virtual),(2021)
N. Tanen, et al., “Quantum Transport in Epitaxial Ultra Wide Bandgap Aluminum Gallium Oxide Tunnel Heterostructures”, Bulletin of the American Physical Society, Denver, USA (2020)
N. Tanen, et al., “MBE Growth and Doping of Ga2O3 Heterostructures”, Electron Materials Conference (EMC) 60th Annual, Santa Barbara, USA (2018)
J. P. McCandless, et al., “Anisotropic resistivity in nanocrystalline ZnO and amorphous InGaZnO”, SPIE Opto, San Francisco (2018)
(Invited) M. L. Schuette, et al., “Heterogeneous integration of low-temperature metal-oxide TFTs,” SPIE Opto, San Francisco (2017)
(Invited) G. Jessen, et al., “Gallium oxide technologies and applications”, 39th IEEE Compound Semiconductor IC(CSIC) Symposium, Miami (2017)
(Invited) G. Jessen, et al., “Toward Realization of Ga2O3 for Power Electronics Applications,” Device Research Conference (DRC),75th Annual, South Bend, USA (2017)
G. Jessen, et al., “Resistivity optimization of β-Ga2O3 for power MOSFETs and RF applications”, MRS Fall Meeting, Boston, USA (2017)
K. Chabak, et al., “Normally-off oxide MOSFETs formed by BCl3 plasma etching”, 2nd International Workshop on Ga2O3 and Related Materials, I1, Parma, Italy (2017)
S. Ringel, et al., “Electronic Defects in Epitaxial and Bulk β-Ga2O3 Characterized by Deep Level Defect Spectroscopy Methods,” 2nd International Workshop on Ga2O3 and Related Materials, Parma, Italy (2017)
G. Jessen, et al., “Development of lateral Ga2O3 FETs for RF and switch applications”, 2nd International Workshop on Ga2O3 and Related Materials, I1, Parma, Italy (2017)
N. A. Moser, et al., “Device development of gallium oxide MOSFETs grown by MOVPE on native substrates for high-voltage applications”, CS Mantech, Indian Wells (2017)
J. P. McCandless, et al., “Germanium Doped β-Ga2O3 MOSFETs with Mobility of 111 cm2/Vs,” Electron Materials Conference (EMC) 59th Annual, South Bend, USA (2017)
K. Chabak, et al.,“Gate-recessed laterally-scaled β-Ga2O3 MOSFETs with high voltage enhancement-mode operation,” Device Research Conference (DRC),75th Annual, South Bend, USA (2017)
A. Green, et al.,“Recent progress in β-Ga2O3 MOSFET design and performance,” GOMACTech, Reno, USA (2017)
J. P. McCandless, et al., “Electrical and Optical Transduction of Single-Crystal 3C-SiC Comb-Drive Resonators in SiC-on-Insulator (SiCOI) Technology”, 17th Solid-State Sensors, Actuators and Microsystems Workshop (Hilton Head), Hilton Head Island, USA (2016)