Refereed Journal Publications
Total Citations: 2100+ h-Index: 18
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Jon has published papers in Applied Physics Letters, Physical Review journals, and IEEE Electron Devices Letters, among others.
He serves as a reviewer for Applied Physics Letters, iScience, Journal of Applied Physics, and AIP Advances.
Papers
Papers
J20. Accumulation and removal of Si impurities on β-Ga2O3 arising from ambient air exposure
J20. Accumulation and removal of Si impurities on β-Ga2O3 arising from ambient air exposure
J19. Single-Crystal Silicon Thermal-Piezoresistive Resonators as High-Stability Frequency References
J19. Single-Crystal Silicon Thermal-Piezoresistive Resonators as High-Stability Frequency References
J18. Growth, catalysis, and faceting of α-Ga2O3 and α-(InxGa1−x)2O3 on m-plane α-Al2O3 by molecular beam epitaxy
J18. Growth, catalysis, and faceting of α-Ga2O3 and α-(InxGa1−x)2O3 on m-plane α-Al2O3 by molecular beam epitaxy
J17. Growth of β-Ga2O3 and ϵ/κ-Ga2O3 on AlN (0001) by molecular-beam epitaxy
J17. Growth of β-Ga2O3 and ϵ/κ-Ga2O3 on AlN (0001) by molecular-beam epitaxy
J16. Proton radiation effects on optically transduced silicon carbide microdisk resonators
J16. Proton radiation effects on optically transduced silicon carbide microdisk resonators
J15. Silicon-doped β-Ga2O3 films grown at 1 µm/h by suboxide molecular-beam epitaxy
J15. Silicon-doped β-Ga2O3 films grown at 1 µm/h by suboxide molecular-beam epitaxy
J14. Growth of α-Ga2O3 on α-Al2O3 by conventional molecular-beam epitaxy and metal-oxide-catalyzed epitaxy
J14. Growth of α-Ga2O3 on α-Al2O3 by conventional molecular-beam epitaxy and metal-oxide-catalyzed epitaxy
J13. Controlled Si doping of β-Ga2O3 by molecular beam epitaxy
J13. Controlled Si doping of β-Ga2O3 by molecular beam epitaxy
J12. Extending the kinetic and thermodynamic limits of molecular-beam epitaxy utilizing suboxide sources or metal-oxide catalyzed epitaxy
J12. Extending the kinetic and thermodynamic limits of molecular-beam epitaxy utilizing suboxide sources or metal-oxide catalyzed epitaxy
J11. (editors' pick) Thermal stability of epitaxial α−Ga2O3 and (Al,Ga)2O3 layers on m-plane sapphire
J11. (editors' pick) Thermal stability of epitaxial α−Ga2O3 and (Al,Ga)2O3 layers on m-plane sapphire
J10. Ultrafast dynamics of Gallium vacancy charge states in β-Ga2O3
J10. Ultrafast dynamics of Gallium vacancy charge states in β-Ga2O3
J9. Adsorption-Controlled Growth of Ga2O3 by Suboxide Molecular-Beam Epitaxy
J9. Adsorption-Controlled Growth of Ga2O3 by Suboxide Molecular-Beam Epitaxy
J8. (editors' pick) Intra- and Inter-Conduction Band Optical Absorption Processes in Ga2O3
J8. (editors' pick) Intra- and Inter-Conduction Band Optical Absorption Processes in Ga2O3
J7. Significantly reduced thermal conductivity in β-(Al0.1Ga0.9)2O3/ Ga2O3 superlattices
J7. Significantly reduced thermal conductivity in β-(Al0.1Ga0.9)2O3/ Ga2O3 superlattices
J6. Recessed-gate enhancement-mode β-Ga2O3 MOSFETs
J6. Recessed-gate enhancement-mode β-Ga2O3 MOSFETs
J5. Ge-Doped β-Ga2O3 MOSFETs
J5. Ge-Doped β-Ga2O3 MOSFETs
N. A. Moser, et al., Applied Physics Letters (2017)
A demonstration of the first Ge doped, β-Ga2O3 transistor.
J4. Highly conductive Homoepitaxial Si-doped Ga2O3 films on (010) β-Ga2O3 by Pulsed Laser Deposition
J4. Highly conductive Homoepitaxial Si-doped Ga2O3 films on (010) β-Ga2O3 by Pulsed Laser Deposition
K. D. Leedy, et al., Applied Physics Letters (2017)
A first demonstration of Si doping in PLD grown Ga2O3. A mobility of 26.5cm2/Vs @ 1.74⨉1020/cm3 was achieved.
J3. High pulsed current density β-Ga2O3 MOSFETs verified by an analytical model corrected for interface charge
J3. High pulsed current density β-Ga2O3 MOSFETs verified by an analytical model corrected for interface charge
J2. β-Ga2O3 MOSFETs for Radio Frequency Operation
J2. β-Ga2O3 MOSFETs for Radio Frequency Operation
A. J. Green, et al., IEEE Electron Device Letters (2017)
This was the first demonstration of RF performance in Ga2O3. Performance up to 12.9 GHz was demonstrated.
J1. Enhancement-mode Ga2O3 wrap-gate fin field-effect transistors on native (100) β-Ga2O3 substrate with high breakdown voltage
J1. Enhancement-mode Ga2O3 wrap-gate fin field-effect transistors on native (100) β-Ga2O3 substrate with high breakdown voltage
K. D. Chabak, et al. , Applied Physics Letters (2016)
In this paper, we demonstrated the first enhancement mode Ga2O3 transistor. This transistor employed a Fin-FET design and achieved on/off ratios of more than 5-orders. This work was featured on the cover of APL.
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